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Part Number | SSM6L35FU |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Arrays |
Brand | Toshiba |
Description | MOSFET N/P-CH 20V 0.18A/0.1A US6 |
Series | - |
Packaging | Cut Tape (CT) |
FET Type | N and P-Channel |
FET Feature | Logic Level Gate, 1.2V Drive |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 50mA, 4V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
Power - Max | 200mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | US6 |
Image | ![]() |
SSM6L35FU(TE85LF)
TOSHBIA
7254
1.08
Running Electronic (HK) Co.,Limited
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TOSHI
6049
1.8625
ATP ELECTRONIC TECHNOLOGY CO., LIMITED
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TOSIBA
3410
2.645
Gallop Great Holdings (Hong Kong) Limited
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TOSIHBA
2242
3.4275
MY Group (Asia) Limited
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TOSHIDA
7629
4.21
Hongkong Shengshi Electronics Limited