(5/5) based on 11 customer reviews
Description
MOSFET N/P-CH 20V 0.18A/0.1A ES6 Series: - FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25～C: 180mA, 100mA Rds On (Max) @ Id, Vgs: 3 Ohm @ 50mA, 4V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: - Input Capacitance (Ciss) @ Vds: 9.5pF @ 3V Power - Max: 150mW Operating Temperature: 150～C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6 (1.6x1.6)
| Part Number | SSM6L35FE,LM |
| Main Category | Discrete Semiconductor Products |
| Sub Category | Transistors - FETs, MOSFETs - Arrays |
| Brand | Toshiba |
| Description | MOSFET N/P-CH 20V 0.18A/0.1A ES6 |
| Series | - |
| Packaging | Tape & Reel (TR) |
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 180mA, 100mA |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 50mA, 4V |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | - |
| Input Capacitance (Ciss) (Max) @ Vds | 9.5pF @ 3V |
| Power - Max | 150mW |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | SOT-563, SOT-666 |
| Supplier Device Package | ES6 (1.6x1.6) |
| Image |  |
SSM6L35FELM
TOSHBIA
9999
0.18
ShenZhen XinChi TianCheng Technology Co,.Ltd
SSM6L35FE,LM
TOSHI
4000
1.0725
Gallop Great Holdings (Hong Kong) Limited
SSM6L35FE,LM
TOSIBA
11619
1.965
Cinty Int'l (HK) Industry Co., Limited
SSM6L35FE,LM
TOSIHBA
25000
2.8575
N&S Electronic Co., Limited
SSM6L35FE,LM
TOSHIDA
15000
3.75
N&S Electronic Co., Limited
