Part Number | TK100A08N1S4X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 80V 214A TO220SIS |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 9000pF @ 40V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 3.2 mOhm @ 50A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
TK100A08N1S4X(S
TOSHBIA
550
1.6
KDH SEMICONDUCTOR CO., LIMITED
TK100A08N1S4X(S
TOSHI
550
2.7025
Gallop Great Holdings (Hong Kong) Limited
TK100A08N1,S4X(S
TOSIBA
100
3.805
TLF ELECTRONICS LTD
TK100A08N1,S4X
TOSIHBA
18000
4.9075
MY Group (Asia) Limited
TK100A08N1,S4X
TOSHIDA
8066
6.01
Viassion Technology Co., Limited