Part Number | TK100A06N1,S4X |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 60V 100A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 140nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 10500pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 2.7 mOhm @ 50A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
TK100A06N1,S4X
TOSHBIA
18000
0.36
MY Group (Asia) Limited
TK100A06N1,S4X(S
TOSHI
5370
1.6225
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK100A06N1,S4X
TOSIBA
20000
2.885
Ande Electronics Co., Limited
TK100A06N1,S4X
TOSIHBA
7269
4.1475
Yingxinyuan INT'L (Group) Limited
TK100A06N1,S4X
TOSHIDA
1000
5.41
REALCHIP TECHNOLOGY (HK) CO., LIMITED