Part Number | TPW1R306PL,L1Q(M |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Series | U-MOSIX-H |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 260A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 960mW (Ta), 170W (Tc) |
Rds On (Max) @ Id, Vgs | - |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | 8-DSOP Advance |
Package / Case | 8-PowerWDFN |
Image |
TPW1R306PL,L1Q
TOSHBIA
15000
1.85
MY Group (Asia) Limited
TPW1R306PL,L1Q(M
TOSHI
10000
2.8675
Nosin (HK) Electronics Co.
TPW1R306PL,L1Q(M
TOSIBA
60000
3.885
Redstar Electronic Limited
TPW1R306PLL1Q
TOSIHBA
22600
4.9025
TERNARY UNION CO., LIMITED
TPW1R306PL
TOSHIDA
82182
5.92
IC Chip Co., Ltd.