Part Number | TPN4R712MD,L1Q(M |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 36A 8TSON ADV |
Series | U-MOSVI |
Packaging | Cut Tape (CT) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 4300pF @ 10V |
Vgs (Max) | ±12V |
FET Feature | - |
Power Dissipation (Max) | 42W (Tc) |
Rds On (Max) @ Id, Vgs | 4.7 mOhm @ 18A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Image |
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