Part Number | TPN22006NH,LQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 60V 9A 8-TSON |
Series | U-MOSVIII-H |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
Vgs(th) (Max) @ Id | 4V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta), 18W (Tc) |
Rds On (Max) @ Id, Vgs | 22 mOhm @ 4.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-TSON Advance (3.3x3.3) |
Package / Case | 8-PowerVDFN |
Image |
TPN22006NH,LQ
TOSHBIA
18000
1.82
MY Group (Asia) Limited
TPN22006NH,LQ(S
TOSHI
203
3.345
Gallop Great Holdings (Hong Kong) Limited
TPN22006NH,LQ(S
TOSIBA
200
4.87
DES TECHNOLOGY (HK) LIMITED
TPN22006NH,LQ
TOSIHBA
2000
6.395
Yingxinyuan INT'L (Group) Limited
TPN22006NH,LQ(S
TOSHIDA
368000
7.92
Shenzhen WTX Capacitor Co., Ltd.