Part Number | TPCF8B01 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 20V 2.7A VS-8 |
Series | U-MOSIII |
Packaging | Tape & Reel (TR) |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 470pF @ 10V |
Vgs (Max) | - |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 330mW (Ta) |
Rds On (Max) @ Id, Vgs | 110 mOhm @ 1.4A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | VS-8 (2.9x1.9) |
Package / Case | 8-SMD, Flat Lead |
Image |
TPCF8B01
TOSHBIA
15868
1.74
HK HEQING ELECTRONICS LIMITED
TPCF8B01
TOSHI
8000
2.6925
Gallop Great Holdings (Hong Kong) Limited
TPCF8B01
TOSIBA
6000
3.645
Yingxinyuan INT'L (Group) Limited
TPCF8B01
TOSIHBA
314728
4.5975
Cicotex Electronics (HK) Limited
TPCF8B01
TOSHIDA
368000
5.55
Shenzhen WTX Capacitor Co., Ltd.