Part Number | TPCF8101 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET P-CH 12V 6A VS-8 |
Series | U-MOSIII |
Packaging | |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 12V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 1.2V @ 200µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 28 mOhm @ 3A, 4.5V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | VS-8 (2.9x1.9) |
Package / Case | 8-SMD, Flat Lead |
Image |
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