Part Number | TPC8012-H |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 200V 1.8A 8-SOP |
Series | 蟺-MOSV |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 440pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 1W (Ta) |
Rds On (Max) @ Id, Vgs | 400 mOhm @ 900mA, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-SOP (5.5x6.0) |
Package / Case | 8-SOIC (0.173", 4.40mm Width) |
Image |
TPC8012-H
TOSHBIA
5000000
0.78
Hongkong Shengshi Electronics Limited
TPC8012-H
TOSHI
3000
1.99
Gallop Great Holdings (Hong Kong) Limited
TPC8012-H
TOSIBA
4868000
3.2
Shenzhen WTX Capacitor Co., Ltd.
TPC8012-H
TOSIHBA
7647
4.41
CIS Ltd (CHECK IC SOLUTION LIMITED)
TPC8012-H
TOSHIDA
5998
5.62
BOYU ELECTRONIC TECHNOLOGY LIMITED