Part Number | TPC6008-H |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 30V 5.9A VS6 |
Series | U-MOSVI-H |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 5.9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 700mW (Ta) |
Rds On (Max) @ Id, Vgs | 60 mOhm @ 3A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | VS-6 (2.9x2.8) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Image |
TPC6008-H
TOSHBIA
12500
1.84
Gallop Great Holdings (Hong Kong) Limited
TPC6008-H
TOSHI
5000000
2.3025
Hongkong Shengshi Electronics Limited
TPC6008-H
TOSIBA
200000
2.765
Shenzhen WTX Capacitor Co., Ltd.
TPC6008-H
TOSIHBA
3000
3.2275
Hong Kong Capital Industrial Co.,Ltd
TPC6008-H(TE85L
TOSHIDA
23000
3.69
CIS Ltd (CHECK IC SOLUTION LIMITED)