Part Number | TK9J90E,S1E(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 900V TO-3PN |
Series | - |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 900V |
Current - Continuous Drain (Id) @ 25°C | 9A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 46nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 250W (Tc) |
Rds On (Max) @ Id, Vgs | 1.3 Ohm @ 4.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |
Image |
TK9J90E,S1E
TOSHBIA
15000
0.02
HK FEILIDI ELECTRONIC CO., LIMITED
TK9J90E,S1E(S
TOSHI
2000
1.0275
DES TECHNOLOGY (HK) LIMITED
TK9J90ES1E
TOSIBA
10
2.035
Antony Electronic Ltd.
TK9J90E,S1E(S
TOSIHBA
15000
3.0425
Redstar Electronic Limited
TK9J90E,S1E(S
TOSHIDA
325
4.05
Well Trend Technology Limited