Part Number | TK8Q65W,S1Q(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 7.8A IPAK |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 7.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 80W (Tc) |
Rds On (Max) @ Id, Vgs | 670 mOhm @ 3.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Stub Leads, IPak |
Image |
TK8Q65W,S1Q(S
TOSHBIA
295
0.5
KDH SEMICONDUCTOR CO., LIMITED
TK8Q65W,S1Q
TOSHI
14000
1.3975
MY Group (Asia) Limited
TK8Q65W,S1Q(S
TOSIBA
295
2.295
Gallop Great Holdings (Hong Kong) Limited
TK8Q65W,S1Q
TOSIHBA
48500
3.1925
WEISOK ELECTRONICS (HK) TECHNOLOGY LIMITED
TK8Q65W,S1Q
TOSHIDA
8661
4.09
Viassion Technology Co., Limited