Part Number | TK8Q60W,S1VQ(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 8A IPAK |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 18.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 80W (Tc) |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Stub Leads, IPak |
Image |
TK8Q60W,S1VQ
TOSHBIA
10
1.18
Connshop Electronics Co.Ltd
TK8Q60W,S1VQ(S
TOSHI
280
2.07
Gallop Great Holdings (Hong Kong) Limited
TK8Q60W,S1VQ
TOSIBA
1000
2.96
MY Group (Asia) Limited
TK8Q60W,S1VQ(S
TOSIHBA
130
3.85
AIC Semiconductor Co., Limited
TK8Q60W/S1VQ(S
TOSHIDA
190
4.74
Green Parts Electronics (HK) Co.,Limited