Part Number | TK8A60W,S4VX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 8A TO-220SIS |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 400µA |
Gate Charge (Qg) (Max) @ Vgs | 18.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 500 mOhm @ 4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
TK8A60W,S4VX(M
TOSHBIA
950
0.05
Acon Electronics Limited
TK8A60W,S4VX
TOSHI
1000
0.725
MY Group (Asia) Limited
TK8A60W,S4VX(M
TOSIBA
1500
1.4
Redstar Electronic Limited
TK8A60W,S4VX(M
TOSIHBA
3500
2.075
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK8A60W,S4VX(M
TOSHIDA
12144
2.75
ASIAWAY (H.K.) LIMITED