Part Number | TK6Q65W,S1Q |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 5.8A IPAK-OS |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 1.05 Ohm @ 2.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Stub Leads, IPak |
Image |
TK6Q65W,S1Q
TOSHBIA
627
0.53
Gallop Great Holdings (Hong Kong) Limited
TK6Q65W,S1Q
TOSHI
7057
1.445
MY Group (Asia) Limited
TK6Q65W,S1Q
TOSIBA
7503
2.36
AIC Semiconductor Co., Limited
TK6Q65W,S1Q
TOSIHBA
8217
3.275
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK6Q65W,S1Q
TOSHIDA
4245
4.19
Yingxinyuan INT'L (Group) Limited