Part Number | TK6Q60W,S1VQ(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 6.2A IPAK |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 820 mOhm @ 3.1A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Stub Leads, IPak |
Image |
TK6Q60W,S1VQ(S
TOSHBIA
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1.18
KDH SEMICONDUCTOR CO., LIMITED
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TOSIHBA
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N&S Electronic Co., Limited
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