Part Number | TK6P60W,RVQ(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 6.2A DPAK |
Series | DTMOSIV |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 310µA |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 820 mOhm @ 3.1A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TK6P60W,RVQ
TOSHBIA
1000
0.3
MY Group (Asia) Limited
TK6P60W,RVQ(S
TOSHI
30000
0.9075
ASIAWAY (H.K.) LIMITED
TK6P60W,RVQ(S
TOSIBA
30000
1.515
TLF ELECTRONICS LTD
TK6P60W,RVQ(S
TOSIHBA
5000
2.1225
HK Parkeli United Development Co.,Ltd
TK6P60W,RVQ(S
TOSHIDA
3030
2.73
N&S Electronic Co., Limited