Part Number | TK6A65WS5X(M |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 5.8A TO-220SIS |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 5.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 180µA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 390pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 1 Ohm @ 2.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
TK6A65W,S5X
TOSHBIA
7101
1.06
MY Group (Asia) Limited
TK6A65WS5X(M
TOSHI
476
2.0975
Gallop Great Holdings (Hong Kong) Limited
TK6A65WS5X
TOSIBA
8528
3.135
NEW IDEAS INDUSTRIAL CO., LIMITED
TK6A65W,S5X
TOSIHBA
1896
4.1725
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK6A65W,S5X
TOSHIDA
3252
5.21
Ande Electronics Co., Limited