Description
TK6A60D, Toshiba, TO-220-3 Full Pack, MOSFET N-CH 600V 6A TO220SIS, Discrete Semiconductor Products, FETs - Single
Part Number | TK6A60D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 6A TO220SIS |
Series | 蟺-MOSVII |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 800pF @ 25V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Rds On (Max) @ Id, Vgs | 1.25 Ohm @ 3A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Image |
TK6A60D
TOSHBIA
200
1.05
Gallop Great Holdings (Hong Kong) Limited
TK6A60D
TOSHI
5000
1.88
Far East Electronics Technology Limited
TK6A60D
TOSIBA
50100
2.71
FLOWER GROUP(HK)CO.,LTD
TK6A60D
TOSIHBA
3000
3.54
Nosin (HK) Electronics Co.
TK6A60D
TOSHIDA
325139
4.37
Cicotex Electronics (HK) Limited