Part Number | TK65S04N1L,LQ(O |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 40V 65A DPAK |
Series | U-MOSVIII-H |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 65A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 2.5V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2550pF @ 10V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 107W (Tc) |
Rds On (Max) @ Id, Vgs | 4.3 mOhm @ 32.5A, 10V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TK65S04N1L,LQ
TOSHBIA
4007
1.04
MY Group (Asia) Limited
TK65S04N1LLQ
TOSHI
7128
1.765
Dedicate Electronics (HK) Limited
TK65S04N1L,LQ(O
TOSIBA
6360
2.49
RoMaks limited
TK65S04N1L,LQ(O
TOSIHBA
4530
3.215
Gallop Great Holdings (Hong Kong) Limited
TK65S04K3L
TOSHIDA
6953
3.94
CIS Ltd (CHECK IC SOLUTION LIMITED)