Part Number | TK65E10N1,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 100V 148A TO220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 148A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 81nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 192W (Tc) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 32.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK65E10N1,S1X(S
TOSHBIA
9239
1.04
Gallop Great Holdings (Hong Kong) Limited
TK65E10N1,S1X(S
TOSHI
90000
1.79
Redstar Electronic Limited
TK65E10N1S1X(S
TOSIBA
200
2.54
RX ELECTRONICS LIMITED
TK65E10N1,S1X
TOSIHBA
11001
3.29
N&S Electronic Co., Limited
TK65E10N1S1X(S
TOSHIDA
11200
4.04
CIS Ltd (CHECK IC SOLUTION LIMITED)