Part Number | TK65A10N1S4X |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 100V 65A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 81nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 5400pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 4.8 mOhm @ 32.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
TK65A10N1S4X(S
TOSHBIA
370
1.07
AIC Semiconductor Co., Limited
TK65A10N1,S4X
TOSHI
36094
1.8725
Gallop Great Holdings (Hong Kong) Limited
TK65A10N1,S4X
TOSIBA
5000
2.675
Sinway International Co., Limited
TK65A10N1,S4X(S
TOSIHBA
30000
3.4775
Redstar Electronic Limited
TK65A10N1,S4X(S)
TOSHIDA
15000
4.28
Yingxinyuan INT'L (Group) Limited