Part Number | TK5Q65W,S1Q(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 5.2A IPAK |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 170µA |
Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 60W (Tc) |
Rds On (Max) @ Id, Vgs | 1.22 Ohm @ 2.6A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-Pak |
Package / Case | TO-251-3 Stub Leads, IPak |
Image |
TK5Q65W,S1Q
TOSHBIA
14000
1.29
MY Group (Asia) Limited
TK5Q65W,S1Q
TOSHI
10000
2.505
ShenZhen HongWeiDe Electronics Store
TK5Q65W,S1Q(S
TOSIBA
1450
3.72
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK5Q65W,S1Q
TOSIHBA
100000
4.935
Wonston Electronics Limited
TK5Q65W,S1Q(S
TOSHIDA
775
6.15
Yingxinyuan INT'L (Group) Limited