Part Number | TK4R3E06PL,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Series | U-MOSIX-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 80A |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 48.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3280pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 87W (Tc) |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 15A, 4.5V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK4R3E06PL,S1X
TOSHBIA
1381
0.45
MY Group (Asia) Limited
TK4R3E06PL,S1X(S
TOSHI
7424
1.0175
Shenzhen Haixinyuan Electronics Co., Ltd.
TK4R3E06PL,S1X(S
TOSIBA
8414
1.585
Shenzhen WTX Capacitor Co., Ltd.
TK4R3E06PL,S1X(S
TOSIHBA
9354
2.1525
DES TECHNOLOGY (HK) LIMITED
TK4R3E06PL,S1X
TOSHIDA
9034
2.72
Viassion Technology Co., Limited