Part Number | TK4R3E06PL,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Series | U-MOSIX-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60V |
Current - Continuous Drain (Id) @ 25°C | 80A |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 48.2nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3280pF @ 30V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 87W (Tc) |
Rds On (Max) @ Id, Vgs | 7.2 mOhm @ 15A, 4.5V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK4R3E06PL,S1X
TOSHBIA
4521
1.56
MY Group (Asia) Limited
TK4R3E06PL,S1X(S
TOSHI
2800
2.5625
Shenzhen Haixinyuan Electronics Co., Ltd.
TK4R3E06PL,S1X(S
TOSIBA
7897
3.565
Shenzhen WTX Capacitor Co., Ltd.
TK4R3E06PL,S1X(S
TOSIHBA
4560
4.5675
DES TECHNOLOGY (HK) LIMITED
TK4R3E06PL,S1X
TOSHIDA
2841
5.57
Viassion Technology Co., Limited