Part Number | TK4A55D |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 550V 4A TO-220SIS |
Series | 蟺-MOSVII |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 550V |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 25V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Rds On (Max) @ Id, Vgs | 1.88 Ohm @ 2A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Image |
TK4A55D
TOSHBIA
6888
0.52
Gallop Great Holdings (Hong Kong) Limited
TK4A55D(STA4,Q,M)
TOSHI
1000
1.435
MY Group (Asia) Limited
TK4A55D
TOSIBA
29910
2.35
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
TK4A55D
TOSIHBA
1339
3.265
NEW IDEAS INDUSTRIAL CO., LIMITED
TK4A55D
TOSHIDA
29910
4.18
ATLANTIC TECHNOLOGY LIMITED