Part Number | TK40P03M1 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 30V 40A DPAK-3 |
Series | U-MOSVI-H |
Packaging | Tape & Reel (TR) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30V |
Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 2.3V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1150pF @ 10V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 10.8 mOhm @ 20A, 10V |
Operating Temperature | - |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Image |
TK40P03M1
TOSHBIA
2000
0.7
Gallop Great Holdings (Hong Kong) Limited
TK40P03M1
TOSHI
5000000
1.5475
Hongkong Shengshi Electronics Limited
TK40P03M1 IC
TOSIBA
2950
2.395
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK40P03M1(T6RDS-Q)
TOSIHBA
18000
3.2425
MY Group (Asia) Limited
TK40P03M1
TOSHIDA
325055
4.09
Cicotex Electronics (HK) Limited