Part Number | TK40E10N1,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 100V 90A TO220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 126W (Tc) |
Rds On (Max) @ Id, Vgs | 8.2 mOhm @ 20A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK40E10N1,S1X
TOSHBIA
16888
0.92
Gallop Great Holdings (Hong Kong) Limited
TK40E10N1,S1X
TOSHI
5000
2.1925
Sinway International Co., Limited
TK40E10N1,S1X(S
TOSIBA
21
3.465
Cicotex Electronics (HK) Limited
TK40E10N1,S1X(S
TOSIHBA
20000
4.7375
YTSX (INT'L) GROUP CO., LIMITED
TK40E10N1,S1X(S
TOSHIDA
30000
6.01
Redstar Electronic Limited