Part Number | TK3R1E04PL,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | X35 PB-F POWER MOSFET TRANSISTOR |
Series | U-MOSIX-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 100A |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 63.4nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4670pF @ 20V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 87W (Tc) |
Rds On (Max) @ Id, Vgs | 3.8 mOhm @ 30A, 4.5V |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
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1
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