Part Number | TK39J60W5,S1VQ(O |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 38.8A TO-3P(N) |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 38.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.7V @ 1.9mA |
Gate Charge (Qg) (Max) @ Vgs | 135nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | Super Junction |
Power Dissipation (Max) | 270W (Tc) |
Rds On (Max) @ Id, Vgs | 65 mOhm @ 19.4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |
Image |
TK39J60W5,S1VQ
TOSHBIA
14000
0.13
MY Group (Asia) Limited
TK39J60W5,S1VQ
TOSHI
11154
0.755
Viassion Technology Co., Limited
TK39J60W5S1VQ(O
TOSIBA
13199
1.38
ATLANTIC TECHNOLOGY LIMITED
TK39J60W5,S1VQ(O
TOSIHBA
100
2.005
RX ELECTRONICS LIMITED
TK39J60W5S1VQ(O
TOSHIDA
236
2.63
Gallop Great Holdings (Hong Kong) Limited