Part Number | TK35N65W5,S1F(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 35A TO-247 |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 4.5V @ 2.1mA |
Gate Charge (Qg) (Max) @ Vgs | 115nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 300V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 270W (Tc) |
Rds On (Max) @ Id, Vgs | 95 mOhm @ 17.5A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
TK35N65W5,S1F
TOSHBIA
7318
0.77
Cinty Int'l (HK) Industry Co., Limited
TK35N65W5,S1F(S
TOSHI
6786
2.0325
DES TECHNOLOGY (HK) LIMITED
TK35N65W5S1F
TOSIBA
8316
3.295
NEW IDEAS INDUSTRIAL CO., LIMITED
TK35N65W5,S1F(S
TOSIHBA
5781
4.5575
Shenzhen WTX Capacitor Co., Ltd.
TK35N65W5S1F
TOSHIDA
1654
5.82
CIS Ltd (CHECK IC SOLUTION LIMITED)