Part Number | TK34E10N1,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 100V 75A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2600pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 103W (Tc) |
Rds On (Max) @ Id, Vgs | 9.5 mOhm @ 17A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK34E10N1,S1X
TOSHBIA
2274
1.68
MY Group (Asia) Limited
TK34E10N1S1X(S
TOSHI
3198
3.2275
BULE SKY ELECTRONIC LIMITED
TK34E10N1,S1X(S
TOSIBA
5930
4.775
ASIAWAY (H.K.) LIMITED
TK34E10N1,S1X(S
TOSIHBA
2883
6.3225
Aspr (ShenZhen) Technology Co.,Ltd
TK34E10N1,S1X(S
TOSHIDA
911
7.87
TLF ELECTRONICS LTD