Part Number | TK32E12N1,S1X |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 120V 60A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 60V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 98W (Tc) |
Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 16A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK32E12N1,S1X(S
TOSHBIA
200
0.68
DES TECHNOLOGY (HK) LIMITED
TK32E12N1,S1X
TOSHI
5000
1.5825
United Sources Industrial Enterprises Limited
TK32E12N1,S1X(S
TOSIBA
340
2.485
HXY Electronics (HK) Co.,Limited
TK32E12N1,S1X(S
TOSIHBA
3000
3.3875
Redstar Electronic Limited
TK32E12N1,S1X(S
TOSHIDA
24390
4.29
CIS Ltd (CHECK IC SOLUTION LIMITED)