Part Number | TK32A12N1,S4X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 120V 32A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 32A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 60V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 16A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
TK32A12N1,S4X
TOSHBIA
8000
1.88
YK TECH ELECTRONIC CO., LIMITED
TK32A12N1,S4X(S
TOSHI
3000
3.235
DES TECHNOLOGY (HK) LIMITED
TK32A12N1,S4X(S
TOSIBA
368000
4.59
Shenzhen WTX Capacitor Co., Ltd.
TK32A12N1S4X(S
TOSIHBA
23600
5.945
N&S Electronic Co., Limited
TK32A12N1,S4X(S
TOSHIDA
45000
7.3
CIS Ltd (CHECK IC SOLUTION LIMITED)