Part Number | TK31V60W,LVQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 30.8A 5DFN |
Series | DTMOSIV |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 240W (Tc) |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 15.4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (8x8) |
Package / Case | 4-VSFN Exposed Pad |
Image |
TK31V60WLVQ
TOSHBIA
3250
1.44
ChipStk Electronics Pte.
TK31V60WLVQ
TOSHI
3200
2.6525
Xinnlinx Electronics Pte
TK31V60W,LVQ
TOSIBA
2500
3.865
Acon Electronics Limited
TK31V60W,LVQ
TOSIHBA
20000
5.0775
HK HEQING ELECTRONICS LIMITED
TK31V60W,LVQ
TOSHIDA
63500
6.29
CIS Ltd (CHECK IC SOLUTION LIMITED)