Part Number | TK31V60W,LVQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 30.8A 5DFN |
Series | DTMOSIV |
Packaging | |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 240W (Tc) |
Rds On (Max) @ Id, Vgs | 98 mOhm @ 15.4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (8x8) |
Package / Case | 4-VSFN Exposed Pad |
Image |
TK31V60WLVQ
TOSHBIA
1456
0.84
ChipStk Electronics Pte.
TK31V60WLVQ
TOSHI
9983
1.66
Xinnlinx Electronics Pte
TK31V60W,LVQ
TOSIBA
2284
2.48
Acon Electronics Limited
TK31V60W,LVQ
TOSIHBA
3300
3.3
HK HEQING ELECTRONICS LIMITED
TK31V60W,LVQ
TOSHIDA
1514
4.12
CIS Ltd (CHECK IC SOLUTION LIMITED)