Part Number | TK31J60W,S1VQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 30.8A TO-3P(N) |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | Super Junction |
Power Dissipation (Max) | 230W (Tc) |
Rds On (Max) @ Id, Vgs | 88 mOhm @ 15.4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |
Image |
TK31J60WS1VQ
TOSHBIA
6298
1.1
Dedicate Electronics (HK) Limited
TK31J60W,S1VQ
TOSHI
1000
1.795
ONSTAR ELECTRONICS CO., LIMITED
TK31J60W,S1VQ
TOSIBA
12000
2.49
Bonase Electronics (HK) Co., Limited
TK31J60W,S1VQ
TOSIHBA
18000
3.185
MY Group (Asia) Limited
TK31J60W,S1VQ(O
TOSHIDA
10000
3.88
LANTEK INT'L TRADE LIMITED