Part Number | TK31J60W5,S1VQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 30.8A TO-3P(N) |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 105nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 230W (Tc) |
Rds On (Max) @ Id, Vgs | 88 mOhm @ 15.4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |
Image |
TK31J60W5S1VQ(O
TOSHBIA
50080
1.3
OCEANIA INTERNATIONAL INDUSTRIAL LIMITED
TK31J60W5S1VQ(O
TOSHI
63289
1.5075
ATLANTIC TECHNOLOGY LIMITED
TK31J60W5
TOSIBA
1
1.715
Wintec Mfg. (Japan) Corporation
TK31J60W,S1VQ
TOSIHBA
18000
1.9225
MY Group (Asia) Limited
TK31J60W
TOSHIDA
25000
2.13
Hong Kong Capital Industrial Co.,Ltd