Part Number | TK31A60W,S4VX |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 30.8A TO-220SIS |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 1.5mA |
Gate Charge (Qg) (Max) @ Vgs | 86nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 45W (Tc) |
Rds On (Max) @ Id, Vgs | 88 mOhm @ 15.4A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
TK31A60W,S4VX(M
TOSHBIA
368000
1.47
Shenzhen WTX Capacitor Co., Ltd.
TK31A60WS4VX(M
TOSHI
27700
2.6725
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK31A60W,S4VX(M
TOSIBA
622
3.875
DES TECHNOLOGY (HK) LIMITED
TK31A60WS4VX
TOSIHBA
2982
5.0775
Nosin (HK) Electronics Co.
TK31A60W,S4VX(M
TOSHIDA
500
6.28
Redstar Electronic Limited