Part Number | TK22E10N1,S1X(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 100V 52A TO220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 72W (Tc) |
Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 11A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
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TK22E10N1,S1X
TOSHBIA
1638
1.52
Gallop Great Holdings (Hong Kong) Limited
TK22E10N1,S1X
TOSHI
14000
2.1475
MY Group (Asia) Limited
TK22E10N1,S1X
TOSIBA
80
2.775
Acon Electronics Limited
TK22E10N1,S1X(S
TOSIHBA
90000
3.4025
Redstar Electronic Limited
TK22E10N1,S1X
TOSHIDA
11080
4.03
N&S Electronic Co., Limited