Part Number | TK22A10N1,S4X |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 100V 52A TO-220 |
Series | U-MOSVIII-H |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
Vgs (Max) | ±20V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Rds On (Max) @ Id, Vgs | 13.8 mOhm @ 11A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
Image |
TK22A10N1S4X(S
TOSHBIA
7373
1.07
Hongkong Dasenic Electronic Limited
TK22A10N1,S4X(S
TOSHI
897
1.8825
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK22A10N1,S4X(S
TOSIBA
3549
2.695
Yingxinyuan INT'L (Group) Limited
TK22A10N1,S4X(S
TOSIHBA
8168
3.5075
N&S Electronic Co., Limited
TK22A10N1S4X
TOSHIDA
527
4.32
N&S Electronic Co., Limited