Part Number | TK20V60W,LVQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 20A 5DFN |
Series | DTMOSIV |
Packaging | Cut Tape (CT) |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 156W (Tc) |
Rds On (Max) @ Id, Vgs | 170 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 5-DFN (8x8) |
Package / Case | 4-VSFN Exposed Pad |
Image |
TK20V60WLVQ(S
TOSHBIA
300
1.1
SEMICON INTERNATIONAL (HONG KONG) CO., LIMITED
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