Part Number | TK20C60W,S1VQ(S2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 20A I2PAK |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 48nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1680pF @ 300V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Rds On (Max) @ Id, Vgs | 155 mOhm @ 10A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
TK20C60W,S1VQ(S2
TOSHBIA
4602
0.23
AIC Semiconductor Co., Limited
TK20C60W,S1VQ(S2
TOSHI
1628
1.29
Gallop Great Holdings (Hong Kong) Limited
TK20C60W,S1VQ(S2
TOSIBA
4297
2.35
N&S Electronic Co., Limited
TK20C60W,S1VQ
TOSIHBA
7007
3.41
N&S Electronic Co., Limited
TK20C60W,S1VQ
TOSHIDA
761
4.47
Viassion Technology Co., Limited