Part Number | TK18E10K3S1X |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 100V 18A TO-220AB |
Series | U-MOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100V |
Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | - |
Rds On (Max) @ Id, Vgs | 42 mOhm @ 9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
Image |
TK18E10K3,S1X
TOSHBIA
1750
1.44
Colorschip(Shenzhen)Technology Co.,Ltd
TK18E10K3,S1X(S
TOSHI
2296
2.54
MY Group (Asia) Limited
TK18E10K3,S1X
TOSIBA
6159
3.64
Orient Power Technology (HK) Co., Limited
TK18E10K3,S1X
TOSIHBA
9620
4.74
RX ELECTRONICS LIMITED
TK18E10K3,S1X(S)
TOSHIDA
7928
5.84
Semitech Inc