Part Number | TK17N65W,S1F(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 17.3A T0247 |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 17.3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 45nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 165W (Tc) |
Rds On (Max) @ Id, Vgs | 200 mOhm @ 8.7A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
TK17N65WS1F
TOSHBIA
6819
1.52
Dedicate Electronics (HK) Limited
TK17N65W,S1F(S
TOSHI
9367
2.69
Gallop Great Holdings (Hong Kong) Limited
TK17N65W,S1F
TOSIBA
7225
3.86
N&S Electronic Co., Limited
TK17N65W,S1F(S
TOSIHBA
8897
5.03
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK17N65WS1F(S
TOSHIDA
2670
6.2
RX ELECTRONICS LIMITED