Part Number | TK16N60W,S1VF |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 15.8A TO247 |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.7V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | Super Junction |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
TK16N60WS1VF
TOSHBIA
6255
1.63
Dedicate Electronics (HK) Limited
TK16N60W,S1VF
TOSHI
960
2.76
HK HEQING ELECTRONICS LIMITED
TK16N60WS1VF(S
TOSIBA
3000
3.89
Bonase Electronics (HK) Co., Limited
TK16N60W,S1VF
TOSIHBA
1199
5.02
Yingxinyuan INT'L (Group) Limited
TK16N60W,S1VF
TOSHIDA
2018
6.15
CIS Ltd (CHECK IC SOLUTION LIMITED)