Part Number | TK16J60W,S1VQ |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 15.8A TO-3P(N) |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 300V |
Vgs (Max) | - |
FET Feature | Super Junction |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |
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TK16J60WS1VQ IC
TOSHBIA
25000
1.77
Ysx Tech Co., Limited
TK16J60W,S1VQ
TOSHI
120
2.3775
Gallop Great Holdings (Hong Kong) Limited
TK16J60W,S1VQ
TOSIBA
2620
2.985
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK16J60W,S1VQ
TOSIHBA
20000
3.5925
Ande Electronics Co., Limited
TK16J60WS1VQ(O
TOSHIDA
14600
4.2
N&S Electronic Co., Limited