Part Number | TK16E60W,S1VX(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N CH 600V 15.8A TO-220 |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.7V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | Super Junction |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK16E60W,S1VX(S
TOSHBIA
80
1.89
Gallop Great Holdings (Hong Kong) Limited
TK16E60W,S1VX(S IC
TOSHI
160
2.7525
HXY Electronics (HK) Co.,Limited
TK16E60W,S1VX(S
TOSIBA
200
3.615
DES TECHNOLOGY (HK) LIMITED
TK16E60W,S1VX(S
TOSIHBA
368000
4.4775
Shenzhen WTX Capacitor Co., Ltd.
TK16E60W,S1VX(S
TOSHIDA
21160
5.34
N&S Electronic Co., Limited