Part Number | TK16C60W,S1VQ(S2 |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 600V 15.8A I2PAK |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 15.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Vgs(th) (Max) @ Id | 3.7V @ 790µA |
Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 300V |
Vgs (Max) | - |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 190 mOhm @ 7.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I2PAK |
Package / Case | TO-262-3 Long Leads, I²ÂPak, TO-262AA |
Image |
TK16C60W,S1VQ IC
TOSHBIA
60
0.85
KDH SEMICONDUCTOR CO., LIMITED
TK16C60W,S1VQ(S2
TOSHI
800
1.485
AIC Semiconductor Co., Limited
TK16C60W,S1VQ(S2
TOSIBA
200
2.12
Gallop Great Holdings (Hong Kong) Limited
TK16C60W,S1VQ(S2
TOSIHBA
11200
2.755
CIS Ltd (CHECK IC SOLUTION LIMITED)
TK16C60W,S1VQ
TOSHIDA
11060
3.39
N&S Electronic Co., Limited