Part Number | TK14N65W,S1F(S |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 13.7A TO-220 |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 3.5V @ 690µA |
Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 6.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Image |
TK14N65W,S1F(S
TOSHBIA
200
0.97
Aspr (ShenZhen) Technology Co.,Ltd
TK14N65W,S1F(S
TOSHI
200
1.825
Gallop Great Holdings (Hong Kong) Limited
TK14N65W,S1F
TOSIBA
14000
2.68
MY Group (Asia) Limited
TK14N65W,S1F(S
TOSIHBA
7500
3.535
Redstar Electronic Limited
TK14N65W,S1F(S
TOSHIDA
21200
4.39
N&S Electronic Co., Limited