Part Number | TK14E65W5,S1X |
Main Category | Discrete Semiconductor Products |
Sub Category | Transistors - FETs, MOSFETs - Single |
Brand | Toshiba |
Description | MOSFET N-CH 650V 13.7A TO-220AB |
Series | DTMOSIV |
Packaging | Tube |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650V |
Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Vgs(th) (Max) @ Id | 4.5V @ 690µA |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 300V |
Vgs (Max) | ±30V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Rds On (Max) @ Id, Vgs | 300 mOhm @ 6.9A, 10V |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220 |
Package / Case | TO-220-3 |
Image |
TK14E65W5,S1X
TOSHBIA
14000
1.07
MY Group (Asia) Limited
TK14E65W5,S1X
TOSHI
984
1.8475
RX ELECTRONICS LIMITED
TK14E65W5,S1X
TOSIBA
50500
2.625
Cicotex Electronics (HK) Limited
TK14E65W,S1X
TOSIHBA
18000
3.4025
MY Group (Asia) Limited
TK14E65W5
TOSHIDA
240
4.18
Yingxinyuan INT'L (Group) Limited